Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

The β-SiC(100) surface studied by low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectra

Moshe Dayan · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +17

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono · IEEE Transactions on Electron Devices · 1981 · 110 citations

Engineering, Materials Engineering, Materials Science +15

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

Kentaro Shibahara, Toshiharu Saito, S. Nishino et al. · IEEE Electron Device Letters · 1986 · 75 citations

Engineering, Electrical Engineering, Materials Science +12

Schottky-barrier field-effect transistors of 3C-SiC

S. Yoshida, Hiroshi Daimon, M. Yamanaka et al. · Journal of Applied Physics · 1986 · 43 citations

Engineering, Electrical Engineering, Materials Science +15