Shigehiro Nishino - Concepedia

Author

Shigehiro Nishino

Kyoto Institute of Technology

Also Known As

;;Shigehiro Nishino;, Shigehiro NISHINO, Shigehiro Nishino, Shigehiro Nishino Shigehiro Nishino

173

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Kyoto Institute of Technology Kyoto University Dong-Eui University Case Western Reserve University

About

Shigehiro Nishino is an author at Kyoto Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	43	2.8K
2	Applied Physics	22	41	2.8K
3	Chemical Engineering	4	4	143
4	Chemistry	3	3	143
5	Natural Sciences	1	1	40

Shigehiro Nishino

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
Production of large-area single-crystal wafers of cubic SiC for semiconductor devices Shigehiro Nishino, J. A. Powell Applied Physics Letters EngineeringBuffer LayerSemiconductorsSemiconductor DevicesWafer Scale Processing	1983	925
Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition Christian A. Zorman, Aaron J. Fleischman, A.S. Dewa, Journal of Applied Physics Materials EngineeringMaterials ScienceNitrogen ConcentrationSilicon WafersEngineering	1995	224
Epitaxial growth and electric characteristics of cubic SiC on silicon Shigehiro Nishino, H. Suhara, H. Ono, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	1987	215
Analyses of attractive forces between particles in Coulomb crystal of dusty plasmas by optical manipulations Kazuo Takahashi, Tomoko Oishi, Kenichi Shimomai, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics EngineeringPhysicsMicroscopyOptical PropertiesLaser Light	1998	209
Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer Shigehiro Nishino, Y. Hazuki, Hiroyuki Matsunami, Journal of The Electrochemical Society EngineeringCrystal Growth TechnologyThin Film Process TechnologyChemical DepositionSurface Technology	1980	180
Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition Kentaro Shibahara, Shigehiro Nishino, Hiroyuki Matsunami Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsCubic Sic	1986	114
Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition Taro Nishiguchi, Mitsuhiro Nakamura, Koji Nishio, Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductorsEngineeringCrystalline Defects	2004	81
Low‐Temperature Growth of 3 C ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material Koji Takahashi, Shigehiro Nishino, Junji Saraie Journal of The Electrochemical Society Materials ScienceSingle CrystalsEpitaxial GrowthEngineeringCrystalline Defects	1992	80
Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition Kentaro Shibahara, Naotaka Kuroda, Shigehiro Nishino, Japanese Journal of Applied Physics Materials ScienceSemiconductorsMaterials EngineeringElectronic DevicesElectrical Engineering	1987	60
Growth and morphology of 6H-SiC epitaxial layers by CVD Shigehiro Nishino, Hiroyuki Matsunami, Tetsuro Tanaka Journal of Crystal Growth Materials EngineeringEngineeringApplied Physics6H-sic Epitaxial LayersMolecular Beam Epitaxy	1978	53

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