Shigehiro Nishino

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 925 citations

Engineering, Buffer Layer, Semiconductors +16

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Christian A. Zorman, Aaron J. Fleischman, A.S. Dewa et al. · Journal of Applied Physics · 1995 · 224 citations

Materials Engineering, Materials Science, Nitrogen Concentration +14

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino, H. Suhara, H. Ono et al. · Journal of Applied Physics · 1987 · 215 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Analyses of attractive forces between particles in Coulomb crystal of dusty plasmas by optical manipulations

Kazuo Takahashi, Tomoko Oishi, Kenichi Shimomai et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 1998 · 209 citations

Engineering, Physics, Microscopy +12

Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

Shigehiro Nishino, Y. Hazuki, Hiroyuki Matsunami et al. · Journal of The Electrochemical Society · 1980 · 180 citations

Engineering, Crystal Growth Technology, Thin Film Process Technology +17