H. Ono

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino, H. Suhara, H. Ono et al. · Journal of Applied Physics · 1987 · 215 citations

Materials Engineering, Materials Science, Electrical Engineering +11

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono · IEEE Transactions on Electron Devices · 1981 · 110 citations

Materials Science, Materials Engineering, Engineering +6

An ECR MOCVD (Ba,Sr)TiO/sub 3/ based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gbit-scale DRAMs

Shintaro Yamamichi, Pierre‐Yves Lesaicherre, Hisateru Yamaguchi et al. · 2002 · 20 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

H. Ono, Y. Umemoto, M. Mori et al. · 2002 · 15 citations

Low-power Electronics, Electrical Engineering, Engineering +14

2 V-operation pseudomorphic power HEMT with 62% power-added efficiency for cellular phones

H. Ono, Y. Umemoto, H. Ichikawa et al. · 2002 · 10 citations

Low-power Electronics, Maximum Power-added Efficiency, Electrical Engineering +12