Epitaxial growth and electric characteristics of cubic SiC on silicon

Abstract

Single crystals of cubic SiC were heteroepitaxially grown by chemical vapor deposition (CVD) using a SiH4-C3H8-H2 system on silicon substrates. To reduce the large lattice mismatch between cubic SiC and silicon, a buffer layer was made by carbonizing the surface of a Si substrate in the CVD system. An optimum condition for the buffer layer formation was determined by x-ray rocking curve measurements, reflection electron diffraction, and Auger electron spectroscopy. Electrical properties of the epitaxial cubic SiC layer were measured, and the mobilities on the Si(111) substrate were found to be larger than those on the Si(100) substrate. Diode characteristics of epitaxially grown p-n junctions were also investigated.