Journal of Applied Physics · 1966 · 229 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSilicon MaterialsElectroluminescenceImpuritiesPhotoluminescenceSemiconductor CharacterizationSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Crystal GrowthTwinning
Chemical, electrical, and optical measurements were performed on n- and p-type β-silicon carbide crystals grown from pure or doped carbon-saturated silicon melts. Pure, transparent yellow crystals showed no detectable impurities and had carrier concentrations in the range of 1016 cm−3. Extensive twinning was observed. Uncorrected electron mobilities of 700–1000 cm2/V·sec were measured at room temperature. Intense injection electroluminescence, peaking at 2.28 eV and 2.0 eV, was observed in many diodes. Strong photoluminescence was observed in aluminum-doped crystals at 77°K and at room temperature when irradiated with uv light.
1