Physical review. B, Solid state · 1975 · 262 citations · 25 references
SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineeringPhysicsSeveral Wide-band-gap SemiconductorsApplied PhysicsCondensed Matter PhysicsGan Power DeviceWide-bandgap SemiconductorsSemiconductor MaterialDrift VelocityHigh Electric FieldsCharge Carrier TransportHigh-field TransportSemiconductor Device
The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above ${10}^{7}$ cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{}${10}^{7}$ cm/sec.
25
Band Structure and Electron Transport of GaAs
Hannelore Ehrenreich · Physical Review · 1960 · 463 citations