Epitaxial Growth and Characterization of β ‐ SiC Thin Films

Abstract

Crack‐free monocrystalline films having very smooth final surfaces may be reproducibly grown at 1600 K and 760 torr on (100) Si substrates using and and if the Si is initially reacted with the alone. This initial step produces a buffer layer which reduces the mismatches in expansion coefficients and lattice parameters and thus allows the subsequent growth of the film to a thickness exceeding 5 μm. It is necessary to heat the Si wafers from room temperature to the reaction temperature in a and environment rather than preheating the substrates to the reaction temperature. An off‐axis orientation of the Si in excess of approximately 3° results in a very rough final growth surface on the film.