S. Nishino

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Publications

Citations

564

H-Index

Active since

1981

Affiliations

Kyoto Institute of Technology(Current)

Kyoto University

S. Nishino is an author at Kyoto Institute of Technology specializing in materials engineering, materials science, and silicon carbide (sic) materials.

Publications per year

1981–2017

Publications

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono · IEEE Transactions on Electron Devices · 1981 · 110 citations

Engineering, Materials Engineering, Materials Science +15

Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

Chien‐Hung Wu, Chacko Jacob, X. J. Ning et al. · Journal of Crystal Growth · 1996 · 79 citations

Engineering, Materials Engineering, Materials Science +12

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

Kentaro Shibahara, Toshiharu Saito, S. Nishino et al. · IEEE Electron Device Letters · 1986 · 75 citations

Engineering, Electrical Engineering, Materials Science +12

Antiphase-domain-free growth of cubic SiC on Si(100)

Kentaro Shibahara, S. Nishino, H. Matsunami · Applied Physics Letters · 1987 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Wenliang Zhu, Jiliang Zhu, S. Nishino et al. · Applied Surface Science · 2005 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +17

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