S. Nishino

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono · IEEE Transactions on Electron Devices · 1981 · 110 citations

Materials Science, Materials Engineering, Engineering +6

Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

Chien‐Hung Wu, Chacko Jacob, X. J. Ning et al. · Journal of Crystal Growth · 1996 · 79 citations

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

Kentaro Shibahara, Toshiharu Saito, S. Nishino et al. · IEEE Electron Device Letters · 1986 · 75 citations

Semiconductor Technology, Electrical Engineering, Engineering +6

Antiphase-domain-free growth of cubic SiC on Si(100)

Kentaro Shibahara, S. Nishino, H. Matsunami · Applied Physics Letters · 1987 · 71 citations

Materials Engineering, Materials Science, Single Crystals +10

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Wenliang Zhu, Jiliang Zhu, S. Nishino et al. · Applied Surface Science · 2005 · 51 citations

Materials Science, Raman Spectroscopy Evaluation, Surface Characterization +6