Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial Growth and Characterization of β ‐ SiC Thin Films

Peter K. Liaw, R. F. Davis · Journal of The Electrochemical Society · 1985 · 247 citations

Engineering, Materials Engineering, Materials Science +17

The fundamentals of chemical vapour deposition

W. A. Bryant · Journal of Materials Science · 1977 · 211 citations

Natural Sciences, Chemical Engineering, Chemistry +11

Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

J. A. Powell, L. G. Matus, Maria A. Kuczmarski · Journal of The Electrochemical Society · 1987 · 184 citations

Natural Sciences, Materials Engineering, Materials Science +17

Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon

M. Stutzmann, W. B. Jackson, C. C. Tsai · Applied Physics Letters · 1984 · 121 citations · Full text

Natural Sciences, Materials Science, Physics +17