Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Abstract

Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, and hydrogen. X-ray photoelectron spectroscopy data confirm that the films are stoichiometric SiC, with no major impurities. X-ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single-crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4×1018 cm3. Cross-sectional TEM images show a fairly rough, void-free interface.