Schottky-barrier field-effect transistors of 3C-SiC

Abstract

Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.