Journal of Applied Physics · 1986 · 43 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionField-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky ContactsSilicon Carbide (Sic) Materials
Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
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Schottky barrier diodes on 3C-SiC
S. Yoshida, Katsuhiro Sasaki, E. Sakuma et al. · Applied Physics Letters · 1985 · 108 citations