Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices

X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interface

W. C. Marra, P. Eisenberger, A. Y. Cho · Journal of Applied Physics · 1979 · 584 citations

Materials Science, Aluminium Nitride, Interface Structure +14

Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

J. B. Lasky, James Nakos, O.J. Cain et al. · IEEE Transactions on Electron Devices · 1991 · 344 citations

Engineering, Chemistry, Electronic Structure +16

Incorporation of metal silicides and refractory metals in VLSI technology

C. M. Osburn, Q.F. Wang, M. Kellam et al. · Applied Surface Science · 1991 · 65 citations

Materials Engineering, Materials Science, Engineering +9

Thermal Stability of Thin Submicrometer Lines of CoSi2

Q. F. Wang, C. M. Osburn, P. L. Smith et al. · Journal of The Electrochemical Society · 1993 · 43 citations

Engineering, Line Width, Integrated Circuits +20

Disintegration of TiSi2 on narrow poly-Si lines at high temperatures

H. Norström, Karen Maex, Peter Vandenabeele · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 27 citations

Narrow Lines, Engineering, Silicon On Insulator +21