Concepedia

Incorporation of metal silicides and refractory metals in VLSI technology

C. M. Osburn, Q.F. Wang, M. Kellam, C. A. Canovai, P. L. Smith, G. E. McGuire, Zhiguang Xiao, G. A. Rozgonyi

Applied Surface Science · 1991 · 65 citations · 41 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsVlsi DesignCmos Circuit DesignIntegrated Circuit DesignIntegrated Circuit FabricationMetalsSemiconductor Device MaterialsVery-large-scale Integration LayoutIntegration Of Iii-v MaterialsRefractory MetalsSilicide ContactsSilicon Device MaterialsSilicon-containing AlloysVery-large-scale Integration (Vlsi) DesignVlsi Implementation

References

41

Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

J. B. Lasky, James Nakos, O.J. Cain et al. · IEEE Transactions on Electron Devices · 1991 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +17

A study of the leakage mechanisms of silicided <i>n</i>+/<i>p</i> junctions

Ruizhe Liu, D. S. Williams, W.T. Lynch · Journal of Applied Physics · 1988 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

A self-aligned cobalt silicide technology using rapid thermal processing

Luc Van den hove, R.A.M. Wolters, Karen Maex et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 101 citations

Engineering, Materials Engineering, Materials Science +13

Characterization of a Self‐Aligned Cobalt Silicide Process

A. E. Morgan, E. K. Broadbent, M. Delfino et al. · Journal of The Electrochemical Society · 1987 · 101 citations

Engineering, Materials Engineering, Materials Science +17

A self-aligned CoSi<sub>2</sub>interconnection and contact technology for VLSI applications

Luc Van den hove, R.A.M. Wolters, Karen Maex et al. · IEEE Transactions on Electron Devices · 1987 · 98 citations

Engineering, Electrical Engineering, Materials Science +17