IEEE Transactions on Electron Devices · 1988 · 32 citations · 18 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityShort-channel EffectsWide Band Gap SemiconductorsBreakdown MechanismsBreakdown VoltageGate Oxide DegradationHot Carrier EffectsHot Carrier GenerationHot Carrier InjectionHot-carrier DegradationThreshold Voltage
The recovery of threshold voltage due to high drain or gate voltage and the effects of hot-carrier stressing on the drain breakdown voltage of MOSFETs have been studied. A high oxide field causes slow recovery through tunneling detrapping of electrons in both p- and n-MOSFETs. For n-MOSFETs the mechanism of fast recovery is low-level hole injection at high V/sub D/. Hot-carrier stressing at high V/sub G/ causes the drain breakdown voltage to decrease (walk-in). This results in enhanced hold injection, thus increasing the rate of subsequent recovery of V/sub t/. The breakdown voltage increases and then decreases when stressed at low gate voltages.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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The impact of gate-induced drain leakage current on MOSFET scaling