Electrochemical and Solid-State Letters · 2003 · 13 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionDielectricsInorganic MaterialsSemiconductor Device MaterialsThin Film Electrical PropertiesThin-film MaterialsCarrier MobilityCharge Carrier MobilityCrystallizationElectrical PropertiesElectrical Properties AnalysisGate Dielectric EngineeringGate DielectricsGate Oxides
The physical (growth rate, composition, crystallization) and electrical properties of Zr-silicates deposited by atomic layer deposition are reported. Hf- and Zr-silicates are particularly attractive for use as gate dielectrics in advanced complementary metal-oxide-semiconductor (CMOS) technologies, because they exhibit high crystallization temperature and result in high carrier mobility at the Si interface. Zr-silicate layers with Zr:Si atom % ratios of 2:1 and 1:1 were deposited on and respectively. For these layers, we found k values of and Crystallization occurs at 1000 and 850°C, respectively. Based on these properties, it is concluded that Zr-silicate layers can be regarded as possible gate dielectrics in advanced CMOS technologies. © 2003 The Electrochemical Society. All rights reserved.
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