T. Dao

Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals

Ray Duffy, T. Dao, Y. Tamminga et al. · Applied Physics Letters · 2006 · 57 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Boron diffusion in amorphous silicon and the role of fluorine

Ray Duffy, V. C. Venezia, A. Heringa et al. · Applied Physics Letters · 2004 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

Ray Duffy, V. C. Venezia, M. Hopstaken et al. · Applied Physics Letters · 2005 · 36 citations

Engineering, Materials Engineering, Materials Science +17

HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors

Z. M. Rittersma, F. Roozeboom, Marcel A. Verheijen et al. · Journal of The Electrochemical Society · 2004 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Boron diffusion in amorphous silicon

V. C. Venezia, Ray Duffy, Lourdes Pelaz et al. · Materials Science and Engineering B · 2005 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +14