M. Hopstaken

Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

Martin M. Frank, Sang‐Bum Kim, S. Brown et al. · Microelectronic Engineering · 2009 · 74 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Boron uphill diffusion during ultrashallow junction formation

Ray Duffy, V. C. Venezia, A. Heringa et al. · Applied Physics Letters · 2003 · 71 citations

Electrical Engineering, Ion Implantation, Engineering +11

Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

E. Cartier, M. Hopstaken, M. Copel · Applied Physics Letters · 2009 · 54 citations

Electrical Engineering, Parasitic Sio2, Engineering +11

Boron diffusion in amorphous silicon and the role of fluorine

Ray Duffy, V. C. Venezia, A. Heringa et al. · Applied Physics Letters · 2004 · 46 citations

Boron Profile, Engineering, Silicon On Insulator +16

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Lukas Czornomaz, Mario El Kazzi, M. Hopstaken et al. · Solid-State Electronics · 2012 · 42 citations

Electrical Engineering, Implant-free Ingaas Mosfets, Engineering +5