E. Cartier

Understanding mobility mechanisms in extremely scaled HfO<inf>2</inf> (EOT 0.42 nm) using remote interfacial layer scavenging technique and V<inf>t</inf>-tuning dipoles with gate-first process

Takashi Ando, Martin M. Frank, Kwang‐Il Choi et al. · 2009 · 71 citations

Engineering, Remote Interfacial Layer, Semiconductor Device +16

Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

E. Cartier, M. Hopstaken, M. Copel · Applied Physics Letters · 2009 · 54 citations

Electrical Engineering, Parasitic Sio2, Engineering +11

Interaction of La2O3 capping layers with HfO2 gate dielectrics

M. Copel, Supratik Guha, N. A. Bojarczuk et al. · Applied Physics Letters · 2009 · 37 citations

Electrical Engineering, Engineering, Physics +11

Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

A. Kerber, E. Cartier, L.-Å. Ragnarsson et al. · 2004 · 32 citations

Device Modeling, Electrical Engineering, Mobility Extraction +12

Advanced gate stacks with fully silicided (FUSI) gates and high-k dielectrics. enhanced performance at reduced gate leakage

E. P. Gusev, C. Cabral, B.P. Linder et al. · 2005 · 28 citations

Materials Engineering, Materials Science, Electrical Engineering +15