N. A. Bojarczuk - Concepedia

Author

N. A. Bojarczuk

IBM Research - Thomas J. Watson Research Center

Also Known As

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu, N A Bojarczuk, N. A. Bojarczuk, N. Bojarczuk, N.A. Bojarczuk, Nestor A Bojarczuk, Nestor A. Bojarczuk, Nestor Bojarczuk

Publications

5.3K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

N. A. Bojarczuk is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	52	4.8K
2	Applied Physics	32	52	4.8K
3	Natural Sciences	5	5	1.3K
4	Chemical Engineering	4	4	1.4K
5	Medicine	1	1	17

N. A. Bojarczuk

Publications

5.2K

Citations

H-Index

Page 1

	Year	Citations
Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu<sub>2</sub>ZnSnS<sub>4</sub> absorber Byungha Shin, Oki Gunawan, Yu Zhu, Progress in Photovoltaics Research and Applications Thin Film PhysicsEngineeringEnergy EfficiencyEnergy ConversionPhoto-electrochemical Cell	2011	1.2K
Thermally evaporated Cu2ZnSnS4 solar cells Kai Wang, Oki Gunawan, Teodor K. Todorov, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringS. Solar CellsEngineering	2010	643
Control of an interfacial MoSe<sub>2</sub> layer in Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier Byungha Shin, Yu Zhu, N. A. Bojarczuk, Applied Physics Letters	2012	315
Ultraviolet and violet GaN light emitting diodes on silicon Supratik Guha, N. A. Bojarczuk Applied Physics Letters Violet GanOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	1998	289
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics Supratik Guha, E. Cartier, M. Gribelyuk, Applied Physics Letters EngineeringMicrostructural CharacteristicsSilicon On InsulatorSemiconductorsAtomic Beam Deposition	2000	238
The Role of Sodium as a Surfactant and Suppressor of Non‐Radiative Recombination at Internal Surfaces in Cu<sub>2</sub>ZnSnS<sub>4</sub> Talia Gershon, Byungha Shin, N. A. Bojarczuk, Advanced Energy Materials EngineeringChemistryChemical DepositionInternal SurfacesSemiconductor Nanostructures	2014	206
Ultrathin high-K gate stacks for advanced CMOS devices E. P. Gusev, D. A. Buchanan, E. Cartier, EngineeringVlsi DesignSilicon On InsulatorSemiconductor DeviceNanoelectronics	2002	195
Robustness of ultrathin aluminum oxide dielectrics on Si(001) M. Copel, E. Cartier, E. P. Gusev, Applied Physics Letters Materials ScienceOxide HeterostructuresElectrical EngineeringUltrathin Al2o3 LayersEngineering	2001	127
On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact Byungha Shin, N. A. Bojarczuk, Supratik Guha Applied Physics Letters Materials ScienceSemiconductorsMose2 FormationTransition Metal ChalcogenidesEngineering	2013	117
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration L. A. Clevenger, N. A. Bojarczuk, K. Holloway, Journal of Applied Physics Materials EngineeringMaterials ScienceCopper PenetrationEngineeringDiffusion Resistance	1993	107

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