Y. Tamminga

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling et al. · Journal of Applied Physics · 2004 · 155 citations

Zirconium Oxide, Engineering, Chemical Deposition +16

Characterization of Plasma Silicon Nitride Layers

W. A. P. Claassen, W. G. J. N. Valkenburg, F.H.P.M. Habraken et al. · Journal of The Electrochemical Society · 1983 · 152 citations

Materials Science, Plasma Electronics, Engineering +11

Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: Results of a CCQM pilot study

M. P. Seah, Steven J. Spencer, Farid Bensebaa et al. · Surface and Interface Analysis · 2004 · 139 citations

Thermal nitridation of silicon dioxide films

F.H.P.M. Habraken, A. E. T. Kuiper, Y. Tamminga et al. · Journal of Applied Physics · 1982 · 118 citations

Materials Science, Materials Engineering, Oxide Heterostructures +15

Deposition and composition of silicon oxynitride films

A. E. T. Kuiper, S. W. Koo, F.H.P.M. Habraken et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 93 citations

Materials Science, Materials Engineering, Optical Materials +13