Characterization of Plasma Silicon Nitride Layers

Abstract

The authors have studied deposition of plasma silicon nitride layers as a function of gas‐phase composition for the system, where is , Ar, or . Most of the depositions were performed at 300°C and at an operating frequency of 50 kHz. The deposited layers were characterized with Anger electron spectroscopy in combination with ion‐bombardment, Rutherford backscattering, and infrared spectroscopy. It is shown that the ratio of the amount of atomic hydrogen atoms bonded to silicon and nitrogen atoms is only a function of the silicon‐nitrogen ratio of the deposited layers. It is further shown that the etch rate of plasma silicon nitride layers in buffered depends primarily on the silicon‐nitrogen ratio and the density of the deposited material.