E. Tois

Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films

K. B. Jinesh, Y. Lamy, E. Tois et al. · Applied Physics Letters · 2009 · 33 citations

Materials Science, Semiconductors, Electrical Engineering +15

$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

Scott Monaghan, K. Cherkaoui, Eileen O’Connor et al. · IEEE Electron Device Letters · 2009 · 31 citations

Engineering, Dram Applications, Thin Film Process Technology +16

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O₃ gate stack

Depei Wu, A.-C. Lindgren, Stefan Persson et al. · IEEE Electron Device Letters · 2003 · 30 citations

Semiconductor Technology, Ald Tin/al/sub 2/O/sub, Electrical Engineering +12

HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors

Z. M. Rittersma, F. Roozeboom, Marcel A. Verheijen et al. · Journal of The Electrochemical Society · 2004 · 29 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Atomic layer deposition of hafnium and zirconium silicate thin films

E. Vainonen-Ahlgren, E. Tois, T. Ahlgren et al. · Computational Materials Science · 2003 · 27 citations

Materials Science, Engineering, Surface Science +7