IEEE Electron Device Letters · 2005 · 19 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsSemiconductor InterfacesSemiconductor ReliabilityCharge TrappingGate Oxide InterfacesInterface StatesInterface Trap StatesMetal Gate ElectrodesThreshold ReliabilityThreshold VoltageThreshold Voltage Stability
Ultrathin nMOSFET hafnium oxide (HfO/sub 2/) gate stacks with TiN metal gate and poly-Si gate electrodes are compared to study the impact of the gate electrode on long term threshold instability reliability for both dc and ac stress conditions. The poly-Si/high-/spl kappa/ interface exhibits more traps due to interfacial reaction than the TiN/high-/spl kappa/ interface, resulting in significantly worse dc V/sub th/ instability. However, the V/sub th/ instability difference between these two stacks decreases and eventually diminishes as ac stress frequency increases, which suggests the top interface plays a minor role in charge trapping at high operating frequency. In addition, ac stress induced interface states (Nit) can be effectively recovered, resulting in negligible G/sub m/ degradation.
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Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling
G. Chen, M.F. Li, C. H. Ang et al. · IEEE Electron Device Letters · 2002 · 163 citations
Behavior of NBTI under AC dynamic circuit conditions
W.W. Abadeer, W. Ellis · 2003 · 98 citations
Engineering, Electrical Engineering, Electronic Materials +16