Jeff J. Peterson

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +17

A new reliability model for post-cycling charge retention of flash memories

Hanmant Belgal, Nick Righos, I. Kalastirsky et al. · 2003 · 108 citations

Engineering, Computer Engineering, Electrical Engineering +15

Electron Trap Generation in High-<tex>$kappa$</tex>Gate Stacks by Constant Voltage Stress

Chadwin D. Young, Dawei Heh, S. Nadkarni et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 75 citations

Engineering, Electrical Engineering, Materials Science +16

Interfacial Layer-Induced Mobility Degradation in High-<i>k</i>Transistors

G. Bersuker, Joel Barnett, N. Moumen et al. · Japanese Journal of Applied Physics · 2004 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

B.H. Lee, Chadwin D. Young, Rino Choi et al. · 2005 · 55 citations

Engineering, Electrical Engineering, Materials Science +14