Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

Engineering, Electrical Engineering, Microelectronics +16

Technology and design challenges for low power and high performance

Vivek De, Shekhar Borkar · 1999 · 338 citations

Engineering, Computer Engineering, Computer Science +17

1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

T.H. Ning, Peter W. Cook, R.H. Dennard et al. · IEEE Transactions on Electron Devices · 1979 · 247 citations

Engineering, Computer Engineering, Electrical Engineering +17

SiGe-channel heterojunction p-MOSFET's

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · IEEE Transactions on Electron Devices · 1994 · 245 citations

Engineering, Electrical Engineering, Materials Science +14

Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

Gianni Taraschi, Arthur J. Pitera, Eugene A. Fitzgerald · Solid-State Electronics · 2004 · 132 citations

Engineering, Materials Engineering, Materials Science +14