Gianni Taraschi

Carrier mobilities and process stability of strained Si <i>n</i>- and <i>p</i>-MOSFETs on SiGe virtual substrates

M. T. Currie, C. W. Leitz, T. A. Langdo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 248 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Ge channel <i>p</i>-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Minjoo Larry Lee, C. W. Leitz, Zhiyuan Cheng et al. · Applied Physics Letters · 2001 · 217 citations

Engineering, Electrical Engineering, Materials Science +16

Dislocation dynamics in relaxed graded composition semiconductors

Eugene A. Fitzgerald, A.Y Kim, M. T. Currie et al. · Materials Science and Engineering B · 1999 · 147 citations

Natural Sciences, Materials Science, Physics +14

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Zhiyuan Cheng, M. T. Currie, C. W. Leitz et al. · IEEE Electron Device Letters · 2001 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

Gianni Taraschi, Arthur J. Pitera, Eugene A. Fitzgerald · Solid-State Electronics · 2004 · 132 citations

Engineering, Materials Engineering, Materials Science +14