Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 396 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Nonequilibrium boron doping effects in low-temperature epitaxial silicon films

B.S. Meyerson, F. K. LeGoues, T.N. Nguyen et al. · Applied Physics Letters · 1987 · 172 citations

Materials Science, Materials Engineering, Boron Nitride +13

Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process Characterization

B.S. Meyerson, William L. Olbricht · Journal of The Electrochemical Society · 1984 · 112 citations

Materials Science, Thickness Profiling, Chemical Engineering +12

Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System

B.S. Meyerson, Mingzhu Yu · Journal of The Electrochemical Society · 1984 · 94 citations

Materials Science, Chemical Engineering, Surface Interactions +14

Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐  B 2 H 6 ‐ He Gas System

Satoshi Nakayama, Izumi Kawashima, Junichi Murota · Journal of The Electrochemical Society · 1986 · 55 citations

Materials Science, Gas System, Boron Nitride +12