Mahesh K. Sanganeria

Copper interconnects for semiconductor devices

Sailesh M. Merchant, Seung H. Kang, Mahesh K. Sanganeria et al. · JOM · 2001 · 45 citations

Semiconductors, Electrical Engineering, Wafer Scale Processing +6

Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Katherine E. Violette, Mahesh K. Sanganeria, Mehmet C. Öztürk et al. · Journal of The Electrochemical Society · 1994 · 30 citations

Engineering, Integrated Circuits, Chemistry +16

Boron Incorporation in Epitaxial Silicon Using Si2 H 6 and  B 2 H 6 in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Mahesh K. Sanganeria, Katherine E. Violette, Mehmet C. Öztürk et al. · Journal of The Electrochemical Society · 1995 · 18 citations

Engineering, Silicon On Insulator, Semiconductors +17

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

Mahesh K. Sanganeria, Douglas T. Grider, Mehmet C. Öztürk et al. · Journal of Electronic Materials · 1992 · 17 citations

Materials Science, Boron Nitride, Engineering +6

Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon onto (100) Silicon: I . The Influence of Prebake on (Epitaxy/Substrate) Interfacial Oxygen and Carbon Levels

Mahesh K. Sanganeria, Mehmet C. Öztürk, Gari Harris et al. · Journal of The Electrochemical Society · 1995 · 15 citations

Materials Science, Engineering, Ultrahigh Vacuum +13