Izumi Kawashima

Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐  B 2 H 6 ‐ He Gas System

Satoshi Nakayama, Izumi Kawashima, Junichi Murota · Journal of The Electrochemical Society · 1986 · 55 citations

Materials Science, Gas System, Boron Nitride +12

Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system

Junichi Takahashi, Yuichi Utsumi, Housei Akazawa et al. · Applied Physics Letters · 1991 · 47 citations

Semiconductors, Si Epitaxial Growth, Epitaxial Growth +14

Photostimulated evaporation of SiO2 and Si3N4 films by synchrotron radiation and its application for low-temperature cleaning of Si surfaces

Housei Akazawa, Junichi Takahashi, Y. Utsumi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 46 citations

Si3n4 Films, Engineering, Optoelectronic Devices +17

Diffusion of As, P, and B from Doped Polysilicon through Thin SiO2 Films into Si Substrates

Takashi Matsuura, Junichi Murota, Nobuo Mikoshiba et al. · Journal of The Electrochemical Society · 1991 · 23 citations

Thin Film Physics, Engineering, Diffusion Characteristics +18

Role of hydrogen in synchrotron-radiation-stimulated evaporation of amorphous SiO2 and microcrystalline Si

Housei Akazawa, J. Takahashi, Y. Utsumi et al. · Applied Physics Letters · 1992 · 15 citations

Materials Science, Synchrotron-radiation-stimulated Evaporation, Amorphous Sio2 +14