Nobuo Mikoshiba - Concepedia

Author

Nobuo Mikoshiba

Also Known As

N Mikoshiba, N. MIKOSHIBA, N. Mikoshiba, NOBUO MIKOSHIBA, Nobuo MIKOSHIBA, Nobuo Mikoshiba, Nobuo Mikoshiba Nobuo Mikoshiba

291

Publications

Citations

H-Index

128

Concepts

All Affiliations

Tohoku University Electrotechnical Institute Hewlett-Packard (Japan)Hiroshima University

About

Nobuo Mikoshiba is an author at Tohoku University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	92	3.4K
2	Applied Physics	29	88	3.3K
3	Natural Sciences	12	14	413
4	Chemical Engineering	5	5	270
5	Health Sciences	1	1	49

Nobuo Mikoshiba

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films K. Tsubouchi, Nobuo Mikoshiba IEEE Transactions on Sonics and Ultrasonics Materials ScienceAluminium NitrideElectrical EngineeringZero-temperature-coefficient Saw DevicesEngineering	1985	490
Formation and observation of 50 nm polarized domains in PbZr1−<i>x</i>Ti<i>x</i>O3 thin film using scanning probe microscope Takanori Hidaka, T. Maruyama, M. Saitoh, Applied Physics Letters Probe MicroscopeEngineeringThin Film Process TechnologyFerroelectric ApplicationQuantum Materials	1996	222
Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition Mizuho Morita, Norihiko Uesugi, Seiji Isogai, Japanese Journal of Applied Physics Aluminium NitrideEngineeringChemical DepositionAluminum NitrideMolecular Beam Epitaxy	1981	129
AlN Material Constants Evaluation and SAW Properties on AlN/Al<inf>2</inf>O<inf>3</inf>and AlN/Si K. Tsubouchi, K. Sugai, Nobuo Mikoshiba Materials EngineeringMaterials ScienceAluminium NitrideMaterial AnalysisEngineering	1981	128
Optical waveguides of single-crystal LiNbO3 film deposited by rf sputtering Satoshi Takada, M. Ohnishi, Hisao Hayakawa, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	1974	114
Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment Junichi Murota, Naoto Nakamura, Manabu Kato, Applied Physics Letters Si FilmsEngineeringConventional Cvd SystemsThin Film Process TechnologyChemical Deposition	1989	106
Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships Mizuho Morita, Seiji Isogai, N. Shimizu, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringAluminium NitrideEpitaxial GrowthEngineering	1981	81
Strong-Field Magnetoresistance of Impurity Conduction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium Nobuo Mikoshiba Physical Review Magnetic PropertiesEngineeringMagnetic ResonanceMagnetic MaterialsMagnetoresistance	1962	70
Fluctuations in the resistive transition in aluminum films Koji Kajimura, Nobuo Mikoshiba Journal of Low Temperature Physics Aluminium NitrideEngineeringSpecific ResistancePhysicsApplied Physics	1971	67
Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition Kazuo Tsubouchi, Kazuya Masu, Nobuyuki Shigeeda, Applied Physics Letters Aluminium NitrideEngineeringVacuum DeviceChemical DepositionPlasma Processing	1990	67

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