Applied Physics Letters · 1998 · 84 citations · 14 references
Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesEr3+ LuminescenceEr DopingLuminescence PropertySemiconductorsChemical EngineeringMolecular Beam EpitaxyMaterials ScienceElectrical EngineeringPhotoluminescenceOptoelectronic MaterialsAluminum Gallium NitrideμM PhotoluminescenceGallium OxideCategoryiii-v SemiconductorEr PlApplied PhysicsGan Power DeviceOptoelectronics
1.54 μm photoluminescence has been observed from GaN doped with Er during growth by metalorganic molecular beam epitaxy. Strong Er3+-related photoluminescence (PL) was measured at room temperature for GaN:Er doped during growth on c-plane Al2O3 and Si. Experiments to evaluate the effects C and O on the optical activity of Er indicated that these impurities dramatically enhance Er PL in GaN. GaN films doped with Er to a concentration of 3×1018 cm−3 with [O]∼1020 cm−3 and [C]∼1021 cm−3 luminesce at 1.54 μm with an intensity ∼2 orders of magnitude greater than films with oxygen and carbon backgrounds of less than 1019 cm−3. The thermal PL quenching behavior was also markedly different for samples of varying O and C content. Er3+ luminescence from samples with high O and C concentrations quenched by only 10% between 15 and 300 K while the integrated PL signal from the samples with lower [O] and [C] quenched ∼85% over the same temperature range.
14
1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon
H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 565 citations
Microstructure of erbium-implanted Si
D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 154 citations