KC Heasman

Characteristics of rare-earth element erbium implanted in silicon

Y. S. Tang, KC Heasman, W. P. Gillin et al. · Applied Physics Letters · 1989 · 97 citations

Natural Sciences, Materials Engineering, Materials Science +16

Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

P. Blood, E. D. Fletcher, K. Woodbridge et al. · IEEE Journal of Quantum Electronics · 1989 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Lattice locations of erbium implants in silicon

Y. S. Tang, Zhang Jingping, KC Heasman et al. · Solid State Communications · 1989 · 48 citations

Engineering, Materials Engineering, Materials Science +12

Calculations of the threshold current and temperature sensitivity of A (GaIn)As strained quantum well laser operating at 1.55 μm

Eoin P. O’Reilly, KC Heasman, A.R. Adams et al. · Superlattices and Microstructures · 1987 · 28 citations

Engineering, Electrical Engineering, Physics +12

A reassessment of intervalence band absorption in 1.6μm (GaIn)(AsP)/InP

A.R. Adams, KC Heasman · Semiconductor Science and Technology · 1987 · 16 citations

Engineering, Electrical Engineering, Materials Science +17