Concepedia

Characteristics of rare-earth element erbium implanted in silicon

Y. S. Tang, KC Heasman, W. P. Gillin, B.J. Sealy

Applied Physics Letters · 1989 · 97 citations · 5 references

DOI

Concepts

Abstract

Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.

References

5

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H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

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Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxy

H. Ennen, J. Wagner, H. Müller et al. · Journal of Applied Physics · 1987 · 130 citations · Full text

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Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP

Gernot S. Pomrenke, H. Ennen, W.H. Haydl · Journal of Applied Physics · 1986 · 127 citations

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Yb-doped InP grown by metalorganic chemical vapor deposition

Kunihiko Uwai, H. Nakagome, Kenichiro Takahei · Applied Physics Letters · 1987 · 65 citations

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