A.R. Adams - Concepedia

Author

A.R. Adams

University of Surrey

Also Known As

A R Adams, A. Adams, A. R. Adams, A.R. Adams, Andy Adams

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

University of Surrey University of Sheffield Université de Montpellier University of Leicester Philips (Netherlands)

About

A.R. Adams is an author at University of Surrey specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	41	1.4K
2	Applied Physics	20	40	1.4K
3	Electrical Engineering	12	13	234
4	Chemistry	2	2	136
5	Education	1	1	14

A.R. Adams

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Band-structure engineering in strained semiconductor lasers Eoin P. O’Reilly, A.R. Adams IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	1994	186
The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers A.F. Phillips, Stephen J. Sweeney, A.R. Adams, IEEE Journal of Selected Topics in Quantum Electronics Semiconductor TechnologyQuantum SciencePhotonicsSpontaneous EmissionAuger Recombination	1999	181
Surface States on Silicon and Germanium Surfaces H. Statz, G. A. deMars, Luke M. Davis, Physical Review Semiconductors-Type Inversion LayersSurface CharacterizationSemiconductor DeviceEngineering	1956	93
The charge transport in orthorhombic sulphur crystals A.R. Adams, W. E. Spear Journal of Physics and Chemistry of Solids EngineeringCharge SeparationChemistryCharge Carrier TransportCharge Transport	1964	78
Determination of alloy scattering potential in Ga1−<i>x</i>Al<i>x</i>As alloys A. K. Saxena, A.R. Adams Journal of Applied Physics Materials ScienceEngineeringSpace ChargePhysicsCrystalline Defects	1985	67
Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics A.T. Meney, D. Prins, A.F. Phillips, IEEE Journal of Selected Topics in Quantum Electronics Short Wavelength OpticEngineeringLaser ScienceHydrostatic Pressure TechniquesLaser Applications	1995	64
Photogeneration of charge carriers and related optical properties in orthorhombic sulphur W. E. Spear, A.R. Adams Journal of Physics and Chemistry of Solids Orthorhombic SulphurOptical MaterialsEngineeringPhotochemistryOptical Properties	1966	58
Background carrier concentration and electron mobility in LPE In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> layers P.D. Greene, S.A. Wheeler, A.R. Adams, Applied Physics Letters SemiconductorsMaterials ScienceAlloy ScatteringMidrange AlloysEngineering	1979	57
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm K. O’Brien, Stephen J. Sweeney, A.R. Adams, Applied Physics Letters Optical PumpingPhotonicsAuger RecombinationEngineeringPhotoluminescence	2006	44
Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers N. F. Massé, Stephen J. Sweeney, I. P. Marko, Applied Physics Letters Optical PumpingPhotonicsP DopingQuantum PhotonicsRoom Temperature	2006	36

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