Stephen J. Sweeney

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

Stephen J. Sweeney, S. R. Jin · Journal of Applied Physics · 2013 · 235 citations

Optical Materials, Engineering, Bismide-nitride Alloys +20

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Zahida Batool, K. Hild, T. J. C. Hosea et al. · Journal of Applied Physics · 2012 · 188 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

A.F. Phillips, Stephen J. Sweeney, A.R. Adams et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1999 · 181 citations

Semiconductor Technology, Quantum Science, Photonics +13

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Peter Ludewig, Nikolai Knaub, N. Hossain et al. · Applied Physics Letters · 2013 · 147 citations · Full text

Engineering, Laser Applications, Laser Material +16

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 142 citations · Full text

Semiconductor Technology, Photonics, Gaas System +12