T. J. C. Hosea

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Zahida Batool, K. Hild, T. J. C. Hosea et al. · Journal of Applied Physics · 2012 · 188 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

Proceedings of the 5th International Conference on Raman Spectroscopy

T. J. C. Hosea, D. J. Lockwood, John W. Arthur et al. · 1976 · 142 citations

Physics, Natural Sciences, Spectroscopy +3

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 142 citations · Full text

Semiconductor Technology, Photonics, Gaas System +12

Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

Igor P. Marko, Zahida Batool, K. Hild et al. · Applied Physics Letters · 2012 · 60 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

T. D. Veal, Louis F. J. Piper, P. H. Jefferson et al. · Applied Physics Letters · 2005 · 52 citations · Full text

Optical Materials, Engineering, Excitation Energy Transfer +19