Band-structure engineering for low-threshold high-efficiency semiconductor lasers

A.R. Adams

Electronics Letters

PhotonicsElectrical EngineeringBand-structure EngineeringEngineeringPhysics +9

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse, +6

IEEE Journal of Selected Topics in Quantum Electronics

Semiconductor TechnologyPhotonicsGaas SystemEngineeringLaser Science +10

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

R. Fehse, Stanko Tomić, A.R. Adams, +4

IEEE Journal of Selected Topics in Quantum Electronics

PhotonicsQuantum ScienceElectrical EngineeringEngineeringTheoretical Calculations +13

The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

Stephen J. Sweeney, A.F. Phillips, A.R. Adams, +2

IEEE Photonics Technology Letters

Wide-bandgap SemiconductorEngineeringTemperature DependenceLaser ApplicationsLaser Material +15

Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Igor P. Marko, N. F. Massé, Stephen J. Sweeney, +4

Applied Physics Letters

SemiconductorsPhotonicsRoom TemperatureQuantum PhotonicsEngineering +13

The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass

L. G. Shantharama, A.R. Adams, C. N. Ahmad, +1

Journal of Physics C Solid State Physics

EngineeringDirect Band GapEffective MassBand GapIi-vi Semiconductor +16

Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

P. Blood, E. D. Fletcher, K. Woodbridge, +2

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringTemperature DependenceLaser Physics +17

InSb1−xNx growth and devices

T. Ashley, T. M. Burke, G.J. Pryce, +5

Solid-State Electronics

Epitaxial GrowthApplied PhysicsInsb1−xnx GrowthMolecular Beam Epitaxy

Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers

Eoin P. O’Reilly, Gareth J. F. Jones, A. Ghiti, +1

Electronics Letters

Optical PumpingPhotonicsSpontaneous EmissionAdvanced Laser ProcessingEngineering +13

Auger recombination in long-wavelength infrared InNxSb1−x alloys

B. N. Murdin, M. Kamal‐Saadi, Andrew J. Lindsay, +10

Applied Physics Letters

Materials SciencePhotonicsAuger RecombinationDilute Nitrogen AlloysEngineering +10