A.R. Adams

Band-structure engineering for low-threshold high-efficiency semiconductor lasers

A.R. Adams · Electronics Letters · 1986 · 573 citations

Engineering, Materials Engineering, Materials Science +17

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 142 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

R. Fehse, Stanko Tomić, A.R. Adams et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 141 citations

Engineering, Electrical Engineering, Materials Engineering +17

The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

Stephen J. Sweeney, A.F. Phillips, A.R. Adams et al. · IEEE Photonics Technology Letters · 1998 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Igor P. Marko, N. F. Massé, Stephen J. Sweeney et al. · Applied Physics Letters · 2005 · 101 citations · Full text

Engineering, Electrical Engineering, Materials Science +17