N. F. Massé

Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Igor P. Marko, N. F. Massé, Stephen J. Sweeney et al. · Applied Physics Letters · 2005 · 101 citations · Full text

Semiconductors, Photonics, Room Temperature +15

Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

N. F. Massé, Stephen J. Sweeney, I. P. Marko et al. · Applied Physics Letters · 2006 · 36 citations · Full text

Optical Pumping, Photonics, P Doping +13

The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers

M. T. Crowley, Igor P. Marko, N. F. Massé et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2009 · 23 citations

Semiconductors, Quantum Science, Photonics +14

Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature

N. F. Massé, A.R. Adams, Stephen J. Sweeney · Applied Physics Letters · 2007 · 21 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers

N. F. Massé, Estelle Homeyer, Igor P. Marko et al. · Applied Physics Letters · 2007 · 20 citations · Full text

Categoryquantum Electronics, Quantum Photonics, Engineering +19