N. F. Massé - Concepedia

Author

N. F. Massé

University of Surrey

Also Known As

Massé, Nicolas, N. F. Masse, N. F. Massé, N. F. Massé, N. Masse, N.F. Masse, Nicolas F. Massé

Publications

246

Citations

H-Index

Concepts

All Affiliations

University of Surrey Fujitsu (Japan)

About

N. F. Massé is an author at University of Surrey specializing in photonics, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	232
2	Applied Physics	7	7	232
3	Physics	7	7	232
4	High-power Lasers	3	3	51
5	Electrical Engineering	1	1	21

N. F. Massé

Publications

232

Citations

H-Index

Page 1

	Year	Citations
Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers Igor P. Marko, N. F. Massé, Stephen J. Sweeney, Applied Physics Letters SemiconductorsPhotonicsRoom TemperatureQuantum PhotonicsEngineering	2005	101
Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers N. F. Massé, Stephen J. Sweeney, I. P. Marko, Applied Physics Letters Optical PumpingPhotonicsP DopingQuantum PhotonicsRoom Temperature	2006	36
The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers M. T. Crowley, Igor P. Marko, N. F. Massé, IEEE Journal of Selected Topics in Quantum Electronics SemiconductorsQuantum SciencePhotonicsQuantum PhotonicsEngineering	2009	23
Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature N. F. Massé, A.R. Adams, Stephen J. Sweeney Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringRoom TemperatureAuger Recombination	2007	21
Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers N. F. Massé, Estelle Homeyer, Igor P. Marko, Applied Physics Letters Categoryquantum ElectronicsQuantum PhotonicsEngineeringLaser ScienceLaser Applications	2007	20
Effect of non‐pinned carrier density above threshold in InAs quantum dot and quantum dash lasers Igor P. Marko, Alf R. Adams, N. F. Massé, IET Optoelectronics Non‐thermal Carrier DistributionQuantum PhotonicsOptical MaterialsEngineeringLaser Science	2014	16
Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers Stephen J. Sweeney, D. McConville, N. F. Massé, physica status solidi (b) PhotonicsPressure DependenceHigh Pressure TechniquesEngineeringLaser Science	2004	15

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