I. P. Marko

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

A. B. Ikyo, I. P. Marko, K. Hild et al. · Scientific Reports · 2016 · 49 citations · Full text

Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

N. F. Massé, Stephen J. Sweeney, I. P. Marko et al. · Applied Physics Letters · 2006 · 36 citations · Full text

Optical Pumping, Photonics, P Doping +13

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Kieran J. Cheetham, A. Krier, I. P. Marko et al. · Applied Physics Letters · 2011 · 20 citations

Wide-bandgap Semiconductor, Auger Recombination, Engineering +16

Pixelated full-colour small molecule semiconductor devices towards artificial retinas

M. Skhunov, Alexander N. Solodukhin, Pavlos Giannakou et al. · Journal of Materials Chemistry C · 2021 · 19 citations · Full text

Engineering, Variable Bandgap, Organic Electronics +16

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

Joydeep Pal, M. A. Migliorato, C.-K. Li et al. · Journal of Applied Physics · 2013 · 18 citations · Full text

Metamorphic Ingan Layer, Strain Dependence, Engineering +16