Electronics Letters · 1988 · 43 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsIii-v SemiconductorsLuminescent MaterialsOptical Properties Of SemiconductorsOptoelectronic MaterialsRare-earth-doped MaterialsSemiconductor Device MaterialsDelayed LuminescenceInorganic SemiconductorsLifetimesLuminescence LifetimePhotoluminescencePhotoluminescence SpectroscopyRare-earth-doped Host MaterialsRare-earth-doped Luminescent Materials
The luminescence lifetime of the 1.54 μm Er3+ emission has been studied in a variety of Si and III-V semiconductor host materials. The ≈1 millisecond lifetimes observed in all hosts indicate that the Er emission is largely radiative, and suggests that Er may be the rare earth dopant best suited for device applications. Additional competing nonradiative effects are seen to appear for certain growth conditions.
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Rare earth activated luminescence in InP, GaP and GaAs
H. Ennen, U. Kaufmann, Gernot S. Pomrenke et al. · Journal of Crystal Growth · 1983 · 77 citations