Photoluminescent properties of Er-doped In1−<i>x</i>Ga<i>x</i>P prepared by metalorganic vapor phase epitaxy

Abstract

Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1−xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0–0.98. All the Er-doped In1−xGaxP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1−xGaxP alloys with x≳0.2, Er3+-related luminescence is observed at 295 K.