2009 · 12 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsCharge TrappingFlash Memory DevicesFloating-gate MemoryNand Flash MemoryRetention Characteristics
TANOS Charge Trap Flash Approach (CTF) is a candidate to replace floating gate approach (FG) for sub-32 nm technology node. However the main challenge for TANOS is its poor retention characteristics. In this paper, we show that by performing an O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> anneal after Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> deposition the charge retention is considerably improved as well as the other memory characteristics: program, erase, endurance.
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Young‐Woo Park, Jungdal Choi, Changseok Kang et al. · 2006 · 64 citations
Engineering, Computer Engineering, Electrical Engineering +13
A Consistent Model for the SANOS Programming Operation
A. Furnémont, M. Rosmeulen, A. Cacciato et al. · 2007 · 16 citations
Engineering, Computer Engineering, Electrical Engineering +12