L. Breuil

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Florin Cerbu, Oreste Madia, D. V. Andreev et al. · Applied Physics Letters · 2016 · 57 citations

Engineering, Hfo2 Layers, Charge Transport +17

Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

G. Van den bosch, Gouri Sankar Kar, Pieter Blomme et al. · IEEE Electron Device Letters · 2011 · 45 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories

A. Suhane, A. Arreghini, R. Degraeve et al. · IEEE Electron Device Letters · 2009 · 43 citations

Trap Distribution, Non-volatile Memory, Engineering +19

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

L. Breuil, L. Haspeslagh, Pieter Blomme et al. · IEEE Transactions on Electron Devices · 2005 · 36 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +12

Defect profiling in FEFET Si:HfO2 layers

Barry O’Sullivan, V. Putcha, Roman Izmailov et al. · Applied Physics Letters · 2020 · 33 citations · Full text

Ferroelectric Si-doped Hfo2, Electrical Engineering, Semiconductor Device +13