A. Furnémont

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 103 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

T. Devolder, Joo-Von Kim, Felipe García‐Sánchez et al. · Physical review. B./Physical review. B · 2016 · 67 citations · Full text

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 63 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

Sushil Sakhare, Manu Perumkunnil, Trong Huynh-Bao et al. · 2018 · 62 citations

Last Level Cache, Non-volatile Memory, Electrical Engineering +14

High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node

Mohit Gupta, Manu Perumkunnil, Kévin Garello et al. · 2020 · 48 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +22