Hubert Hody

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 103 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

B. Govoreanu, A. Redolfi, L. Zhang et al. · 2013 · 78 citations

Vertical Rram Requirements, Electrical Engineering, Non-volatile Memory +12

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Kévin Garello, Faisal Mohd-Yasin, Hubert Hody et al. · 2019 · 63 citations · Full text

Spintronics, Electrical Engineering, Non-volatile Memory +12

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 62 citations

Electrical Engineering, Capacitorless Dram, Engineering +13

A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability

B. Govoreanu, D. Crotti, Subhali Subhechha et al. · 2015 · 45 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17