Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm<sup>2</sup> Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Abstract

A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination system, advanced blocking oxide of the TANOS cell, and PVD tungsten and flowable oxide for bit line