Jongsun Sel

Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm<sup>2</sup> Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Young‐Woo Park, Jungdal Choi, Changseok Kang et al. · 2006 · 64 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +21

A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

Yoocheol Shin, Jungdal Choi, Changseok Kang et al. · 2006 · 57 citations

Non-volatile Memory, Nand Flash Technology, Engineering +18

8Gb MLC (Multi-Level Cell) NAND flash memory using 63nm process technology

Jong‐Ho Park, Sung‐Hoi Hur, Joun-Hee Lee et al. · 2005 · 53 citations

Non-volatile Memory, Engineering, Computer Architecture +17

Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Changseok Kang, Jungdal Choi, Jaesung Sim et al. · 2007 · 47 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Multi-Level NAND Flash Memory with 63 nm-Node TANOS (Si-Oxide-SiN-Al2O3-TaN) Cell Structure

C.-H. Lee, Jaehyuck Choi, C. J. Kang et al. · 2006 · 36 citations

Non-volatile Memory, Cell Structure, Engineering +19