Yoocheol Shin

A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

Yoocheol Shin, Jungdal Choi, Changseok Kang et al. · 2006 · 57 citations

Non-volatile Memory, Nand Flash Technology, Engineering +18

Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Changseok Kang, Jungdal Choi, Jaesung Sim et al. · 2007 · 47 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

Jang‐Sik Lee, Changseok Kang, Yoocheol Shin et al. · Japanese Journal of Applied Physics · 2006 · 33 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

Chang‐Hyun Lee, Changseok Kang, Jaesung Sim et al. · 2006 · 20 citations

Materials Science, Hardware Security, Electrical Engineering +14

The leakage current improvement in an ultrashallow junction NMOS with Co silicided source and drain

Woo-Tag Kang, Jeong‐Seok Kim, Kang‐Yoon Lee et al. · IEEE Electron Device Letters · 2000 · 10 citations

Electrical Engineering, Engineering, Nanoelectronics +10