2007 · 47 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice ReliabilityMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor ReliabilityCharge TrappingCharge Trapping ReliabilityFlash MemoryFlash Memory ReliabilityGate Oxide DegradationGate Oxide ReliabilityNand Flash MemoryTrap Mechanisms
It was found that the charge loss behavior of TANOS (TaN-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -nitride-oxide-silicon) cells for NAND flash memory application is highly dependent on the gate structures for the first time. The gate structures with trap layers remained on source and drain regions showed increased charge loss compared to the one with trap layers separated between different gate lines. The improvement by removing the trap layers between gate lines suggests that the lateral charge spreading via trap layers from the programmed cells to the adjacent erased cells contributes to the charge loss of the TANOS cells.
4
Young‐Woo Park, Jungdal Choi, Changseok Kang et al. · 2006 · 64 citations
Engineering, Computer Engineering, Electrical Engineering +13
Reliability Model of Bandgap Engineered SONOS (BE-SONOS)
Hang-Ting Lue, Szu-Yu Wang, Yi‐Hsuan Hsiao et al. · 2006 · 29 citations