Flash Memory Reliability

Flash Memory Reliability is a metric that quantifies the durability and data retention accuracy of non-volatile flash memory in automotive microcontrollers under operational stress conditions such as temperature variation, voltage fluctuations, and write/erase cycling.

552

Publications

23.2K

Citations

2K

Authors

335

Institutions

Publications per year

2017–2026

112

Authors

2K

  1. OM
    Onur Mutlu

    Carnegie Mellon University, United States

    22 publications · 3.2K citations

    22

    h-index

  2. EF
    Erich F. Haratsch

    Carnegie Mellon University, United States

    20 publications · 2.7K citations

    20

    h-index

  3. TK
    Tei‐Wei Kuo

    National Taiwan University, Taiwan

    29 publications · 1.4K citations

    18

    h-index

  4. YC
    Yuan-Hao Chang

    National Taiwan University, Taiwan

    26 publications · 904 citations

    17

    h-index

  5. AV
    A. Visconti

    University of Padua, Italy

    20 publications · 1.3K citations

    15

    h-index

1–5 of 2K

Venues

  1. IEEE Transactions on Electron Devices

    40 publications · 1.2K citations

    21

    h-index

  2. IEEE Transactions on Nuclear Science

    20 publications · 822 citations

    18

    h-index

  3. IEEE Electron Device Letters

    20 publications · 1.1K citations

    16

    h-index

  4. 12

    h-index

  5. 10

    h-index

1–5