Flash Memory Reliability
Flash Memory Reliability is a metric that quantifies the durability and data retention accuracy of non-volatile flash memory in automotive microcontrollers under operational stress conditions such as temperature variation, voltage fluctuations, and write/erase cycling.
552
Publications
23.2K
Citations
2K
Authors
335
Institutions
Publications per year
2017–2026
112
Parents
552
R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 822 citations
Engineering, Computer Engineering, Electrical Engineering +17
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 547 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +12
Laura M. Grupp, Adrian M. Caulfield, Joel Coburn et al. · 2009 · 429 citations
Error Patterns in MLC NAND Flash Memory: Measurement, Characterization, and Analysis
Yu Cai, Erich F. Haratsch, Onur Mutlu et al. · 2012 · 321 citations
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335
Carnegie Mellon University
Pittsburgh, United States
22 h-index
70 publications
10.3K citations
Politecnico di Milano
Milan, Italy
18 h-index
68 publications
2.1K citations
Samsung (South Korea)
Seoul, South Korea
18 h-index
210 publications
6.5K citations

National Taiwan University
Taipei, Taiwan
18 h-index
73 publications
3.6K citations
Intel (United States)
Santa Clara, United States
16 h-index
47 publications
4.3K citations

Huazhong University of Science and Technology
Wuhan, China
14 h-index
78 publications
2.2K citations
Chuo University
Hachiōji, Japan
14 h-index
56 publications
1.3K citations
California Institute of Technology
Pasadena, United States
14 h-index
30 publications
1.2K citations
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40 publications · 1.2K citations
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20 publications · 822 citations
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20 publications · 1.1K citations
16
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12 publications · 272 citations
12
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11 publications · 446 citations
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